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SUD50P10-43L-E3 Datasheet, PDF (6/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET | |||
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SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10â2
Single Pulse
10â1
1
10
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 _C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
Normalized Thermal Transient Impedance, Junction-to-Case
0.02
Single Pulse
0.01
10â4
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73445.
www.vishay.com
6
Document Number: 73445
Sâ60311âRev. B, 27-Feb-06
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