SUD50P10-43L-E3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET

SUD50P10-43
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –100 V, V_GS = 0 V
V_DS = –100 V, V_GS = 0 V, T_J = 55 _C
V_DS w 5 V, V_GS = –10 V
V_GS = –10 V, I_D = –9.4 A
V_DS = –15 V, I_D = –9.4 A
–100
–2
–35
–105
7
–3
0.036
30
V
mV/_C
–4
V
"100
nA
–1
mA
–10
A
0.043
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = –50 V, V_GS = 0 V, f = 1 MHz
V_DS = –50 V, V_GS = –10 V, I_D = –9.4 A
f = 1 MHz
V_DD = –50 V, R_L = 6.4 W
I_D ^ –7.8 A, V_GEN = –10 V, R_g = 1 W
5230
230
pF
165
105
160
21
nC
29
4.1
W
30
50
115
175
ns
80
120
60
90
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current^a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I_S
T_C = 25 _C
I_SM
V_SD
I_S = –7.8 A
t_rr
Q_rr
I_F = –7.8 A, di/dt = 100 A/ms, T_J = 25 _C
t_a
t_b
–50
A
–50
–0.8
–1.2
V
60
90
ns
180
270
nC
48
ns
12
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73445
S–60311—Rev. B, 27-Feb-06