SUD50P10-43L-E3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET

New Product
SUD50P10-43
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
V_DS (V)
–100
r_DS(on) (W)
0.043 at V_GS = –10 V
I_D (A)^a
–38
Q_g (Typ)
105 nC
FEATURES
D TrenchFETr Power MOSFET
RoHS
COMPLIANT
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
T_C = 25 _C
T_A = 25 _C
L = 0.1 mH
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
–100
"20
–38^a
–31.8^a
–9.4^{b, c}
–7.8^{b, c}
–50
–50^a
–6.9^{b, c}
–40
80
136
95
8.3^{b, c}
5.8^{b, c}
–50 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 _C/W.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
t p 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
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