SUD50P10-43L-E3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET

SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.08
T_J = 150 _C
10
T_J = 25 _C
0.07
T_A = 125 _C
0.06
0.05
T_A = 25 _C
0.04
0.03
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.02
4
5
6
7
8
9
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
3.4
Single Pulse Power, Junction-to-Ambient
35
3.1
30
I_D = 250 mA
25
2.8
20
2.5
15
2.2
10
1.9
5
1.6
–50 –25
0 25 50 75 100 125 150 175
T_J – Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Ambient
100
1
10
Time (sec)
100
1000
*Limited by r_DS(on)
10
1
0.1
0.01
T_A = 25 _C
Single Pulse
100 ms
1 ms
10 ms
100 ms
1s
10 s
dc
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4
0.001
0.1
1
10
100
1000
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73445
S–60311—Rev. B, 27-Feb-06