SUD50P10-43L-E3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET

New Product
SUD50P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
35
V_GS = 10 thru 6 V
30
5V
25
20
Transfer Characteristics
20
16
12
15
10
5
0
0.0
4V
0.4
0.8
1.2
1.6
2.0
V_DS – Drain-to-Source Voltage (V)
8
T_A = 125 _C
4
25 _C
–55 _C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
0.038
On-Resistance vs. Drain Current
V_GS = 10 V
0.037
7000
6000
5000
4000
Capacitance
C_iss
0.036
3000
2000
1000
C_oss
C_rss
0.035
0
5
10 15 20 25 30 35
I_D – Drain Current (A)
0
0
20
40
60
80
100
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
I_D = 9.4 A
8
V_DS = 50 V
6
V_DS = 80 V
4
2
On-Resistance vs. Junction Temperature
2.3
2.0
I_D = 9.4 A
1.7
V_GS = 10 V, 6 V
1.4
1.1
0.8
0
0
20
40
60
80
100 120
Q_g – Total Gate Charge (nC)
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
0.5
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
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