SUD50P10-43L-E3 Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 C MOSFET

New Product
SUD50P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
50
140
120
40
100
30
80
20
60
40
10
20
0
0
0
25 50 75 100 125 150 175
25
T_C – Case Temperature (_C)
Power De-Rating
50
75
100 125 150 175
T_C – Case Temperature (_C)
Single Pulse Avalanche Capability
100
10
T_A
+
L@
BV *
I_A
V_DD
1
0.000001
0.00001
0.0001
0.001
0.01
T_A – Time In Avalanche (sec)
*The power dissipation P_D is based on T_J(max) = 175 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
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