SUD50P08-26 Datasheet, PDF (6/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
SUD50P08-26
Vishay Siliconix
0.2
0.1
0.1 _0.05
0.02
0.01
10^-2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 40 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-1
1
10
100
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 ^0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73442.
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
www.vishay.com
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