SUD50P08-26 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

SUD50P08-26
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
60
0.05
0.04
T_J = 150 °C
0.03
10
0.02
T_A = 125 °C
T_A = 25 °C
T_J = 25 °C
0.01
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.7
3.4
3.1
I_D = 250 µA
2.8
2.5
2.2
1.9
1.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
*Limited by
r _DS(on)
10
1
0.1
0.01
T_A = 25 °C
Single Pulse
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.01
0.1
1
10
100
1000
Time (sec)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
100 ms
1s
10 s
dc
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73442
S-71661-Rev. B, 06-Aug-07