SUD50P08-26 Datasheet, PDF (2/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

SUD50P08-26
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = - 250 µA
- 80
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = - 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
-2
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = - 80 V, V_GS = 0 V
V_DS = - 80 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = - 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
r_DS(on)
g_fs
V_GS = - 10 V, I_D = - 12.9 A
V_DS = - 15 V, I_D = - 12.9 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = - 40 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = - 40 V, V_GS = - 10 V, I_D = - 12.9 A
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 40 V, R_L = 3.7 Ω
I_D ≅ - 10.8 A, V_GEN = - 10 V, R_g = 1 Ω
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
Body Diode Voltage
V_SD
I_S = - 10.8 A
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = - 10.8 A, di/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Typ
Max
Unit
- 80
7.5
-3
0.022
39
V
mV/°C
-4
V
± 100
nA
-1
µA
- 10
A
0.026
Ω
S
5160
320
pF
220
102
155
22
nC
29
4
Ω
15
25
50
75
ns
90
135
65
100
- 50
A
- 60
- 0.8
- 1.2
V
60
90
ns
150
235
nC
45
ns
15
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73442
S-71661-Rev. B, 06-Aug-07