SUD50P08-26 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

New Product
SUD50P08-26
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
- 80
r_DS(on) (Ω)
0.026 at V_GS = - 10 V
I_D (A)^a
- 50
Q_g (Typ)
102 nC
FEATURES
• TrenchFET^® Power MOSFET
RoHS
COMPLIANT
TO-252
S
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P08-26-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Avalanche Current
Single-Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 80
± 20
- 50^a
- 43.6^a
- 12.9^{b, c}
- 10.8^{b, c}
- 60
- 50^a
- 6.9^{b, c}
- 45
101
136
95
8.3^{b, c}
5.8^{b, c}
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 sec
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 40 °C/W.
Symbol
R_thJA
R_thJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
www.vishay.com
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