SUD50P08-26 Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

New Product
SUD50P08-26
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
60
V_GS = 10 thru 6 V
50
40
5V
30
20
10
0
0.0
4V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
16
12
8
T_A = 125 °C
4
25 °C
- 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
0.023
V_GS = 10 V
0.022
0.021
0.020
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8000
7000
6000
C_iss
5000
4000
3000
2000
1000
C_oss
C_rss
0
0 10 20 30 40 50 60 70 80
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 12.9 A
8
V_DS = 40 V
6
4
V_DS = 64 V
2.0
I_D = 12.9 A
1.7
1.4
1.1
V_GS = 10 V
V_GS = 6 V
2
0.8
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Q_g - Gate Charge
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
0.5
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3