SUD50P08-26 Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel 80-V (D-S) 175 °C MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
60
50
40
Package Limited
30
20
10
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
100
140
120
100
80
60
40
20
0
25
SUD50P08-26
Vishay Siliconix
50
75
100 125 150 175
T_C - Case Temperature (°C)
Power Derating
10
T_A =
L · I_A
BV - V_DD
1
0.000001 0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
www.vishay.com
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