SIA477EDJT Datasheet, PDF (6/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty cycle = 0.5
SiA477EDJT
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single pulse
t₁
t₂
1. Duty cycle, D =
t₁
t₂
2. Per unit base = R _thJA = 80 C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface mounted
10^-3
10^-2
10^-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.1
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77703.
S16-1724-Rev. A, 29-Aug-16
6
Document Number: 77703
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000