SIA477EDJT Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA477EDJT
Vishay Siliconix
Axis Title
8
I_D = 10 A
6
V_DS = 6 V
4
V_DS = 3 V
2
V_DS = 9.6 V
10000
1000
100
0
10
0
10 20 30 40 50 60
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
1.5
1.4
I_D = 5 A
1.3
1.2
Axis Title
V_GS = 4.5 V; 3.7 V
V_GS = 2.5 V
10000
1000
1.1
V_GS = 1.8 V
1.0
100
0.9
0.8
0.7
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.06
0.04
Axis Title
I_D = 5 A
10000
1000
0.02
T_J = 150 °C ¹⁰⁰
T_J = 25 °C
0
10
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.8
10000
0.7
0.6
1000
0.5
0.4
100
I_D = 250 μA
0.3
0.2
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1 1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
S16-1724-Rev. A, 29-Aug-16
4
Document Number: 77703
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000