SIA477EDJT Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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SiA477EDJT
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Dynamic ^b
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = -250 μA
I_D = -250 μA
V_DS = V_GS, I_D = -250 μA
V_DS = 0 V, V_GS = ± 8 V
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = -20 V, V_GS = 0 V
V_DS = -20 V, V_GS = 0 V, T_J = 55 °C
V_DS  -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -5 A
V_GS = -3.7 V, I_D = -5 A
V_GS = -2.5 V, I_D = -3 A
V_GS = -1.8 V, I_D = -1 A
V_DS = -6 V, I_D = -5 A
-12
-
-
V
-
-3.9
-
mV/°C
-
2.5
-
-0.4
-
-1
V
-
-
± 12
-
-
±1
μA
-
-
-1
-
-
-10
-20
-
-
A
-
0.0110 0.0130
-
0.0114 0.0145

-
0.0145 0.0190
-
0.0228 0.0320
-
30
-
S
Input Capacitance
C_iss
-
3050
-
Output Capacitance
C_oss
V_DS = -6 V, V_GS = 0 V, f = 1 MHz
-
725
-
pF
Reverse Transfer Capacitance
C_rss
-
740
-
Total Gate Charge
Gate-Source Charge
Q_g
V_DS = -6 V, V_GS = -10 V, I_D = -10 A
-
-
Q_gs
V_DS = -6 V, V_GS = -4.5 V, I_D = -10 A
-
55
83
33
50
nC
4.3
-
Gate-Drain Charge
Q_gd
-
8.9
-
Gate Resistance
R_g
f = 1 MHz
1.2
6
12

Turn-On Delay Time
t_d(on)
-
25
50
Rise Time
Turn-Off Delay Time
t_r
V_DD = -6 V, R_L = 1 
-
t_d(off)
I_D  -10 A, V_GEN = -4.5 V, R_g = 1 
-
25
50
70
140
Fall Time
Turn-On Delay Time
t_f
t_d(on)
-
50
100
ns
-
10
20
Rise Time
Turn-Off Delay Time
t_r
V_DD = -10 V, R_L = 1 
-
20
40
t_d(off)
I_D  -10 A, V_GEN = -8 V, R_g = 1 
-
90
180
Fall Time
t_f
-
46
90
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
T_C = 25 °C
I_S = -10 A, V_GS = 0 V
I_F = -10 A, dI/dt = 100 A/μs,
T_J = 25 °C
-
-
-12
A
-
-
-50
-
-0.8
-1.2
V
-
60
120
ns
-
39
80
nC
-
22
-
ns
-
38
-
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1724-Rev. A, 29-Aug-16
2
Document Number: 77703
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