SIA477EDJT Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 _{IDM limited}
Limited by R_DS(on) ⁽¹⁾
10
I_D limited
1
0.1
Axis Title
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
10000
1000
100
T_A = 25 °C
Single pulse
0.01
0.1
BVDSS limited
1
10
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
SiA477EDJT
Vishay Siliconix
35
30
25
20
15
10
5
0
0
Axis Title
10000
1000
Package limited
100
25 50 75 100 125
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
10
150
20
15
10
5
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating
Note
a. The power dissipation P_D is based on T_J max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1724-Rev. A, 29-Aug-16
5
Document Number: 77703
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