SIA477EDJT Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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SiA477EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
15.0
10000
12.0
9.0
6.0
3.0
T_J = 25 °C
1000
100
0
10
0 2 4 6 8 10 12 14 16
V_GS - Gate-to-Source Voltage (V)
2nd line
Gate Current vs. Gate-Source Voltage
Axis Title
10^-2
10000
10^-3
10^-4
10^-5
T_J = 150 °C
1000
10^-6
T_J = 25 °C
10^-7
100
10^-8
10^-9
10^-10
0
2 4 6 8 10 12 14
V_GS - Gate-to-Source Voltage (V)
2nd line
10
16
Gate Current vs. Gate-Source Voltage
Axis Title
50
V_GS = 5 V thru 2.5 V
10000
40
1000
30
V_GS = 2 V
20
10
0
0
100
V_GS = 1.5 V
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10
5
Axis Title
50
10000
40
1000
30
20
10
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
2.5
0.04
Axis Title
10000
0.03
V_GS = 1.8 V
1000
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 3.7 V
100
0
10
0
10
20
30
40
50
I_D - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
5000
Axis Title
10000
4000
C_iss
3000
C_oss
2000
1000 ^Crss
1000
100
0
10
0
2
4
6
8
10 12
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
S16-1724-Rev. A, 29-Aug-16
3
Document Number: 77703
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000