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SI8447DB Datasheet, PDF (6/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
Si8447DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
15
12
12
9
9
6
6
3
3
0
0
0
25
50
75
100 125 150
25
TC - Case Temperature (°C)
Current Derating*
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 64802
S-09-0664-Rev. A, 20-Apr-09