SI8447DB Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si8447DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.075 at V_GS = - 4.5 V
- 20
0.105 at V_GS = - 2.5 V
0.260 at V_GS = - 1.7 V
I_D (A)^e
- 11
- 9.5
- 6.0
Q_g (Typ.)
7.5 nC
MICRO FOOT
Bump Side View
Backside View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Battery Switch
• Charger Switch
S
S
G
G
2
1
S
S
3
6
D
D
4
5
D
P-Channel MOSFET
Device Marking: 8447
xxx = Date/Lot Traceability Code
Ordering Information: Si8447DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions^c
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
VPR
IR/Convection
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 20
± 12
- 11
- 8.9
- 5.1^{a, b}
- 4.1^{a, b}
- 15
- 10.8
- 2.3^{a, b}
13
8.4
2.77^{a, b}
1.77^{a, b}
- 55 to 150
260
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T_C = 25 °C.
Document Number: 64802
S-09-0664-Rev. A, 20-Apr-09
Unit
V
A
W
°C
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