SI8447DB Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si8447DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
V_GS = 5 V thru 3 V
12
V_GS = 2.5 V
4
T_C = 125 °C
9
V_GS = 2 V
6
3
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.350
0.300
0.250
V_GS = 1.7 V
0.200
0.150
V_GS = 2.5 V
0.100
0.050
V_GS = 4.5 V
0.000
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 1 A
8
6
4
V_DS = 10 V
V_DS = 16 V
2
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
Gate Charge
www.vishay.com
4
3
2
1
0
0.0
1000
T_C = 25 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
C_iss
600
400
C_oss
200
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
I_D = 1 A
1.3
V_GS = 4.5 V
1.2
1.1
V_GS = 2.5 V
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64802
S-09-0664-Rev. A, 20-Apr-09