SI8447DB Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si8447DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.25
I_D = 1 A
0.20
10
0.15
T_J = 150 °C
T_J = 25 °C
0.10
1
0.05
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.9
25
0.8
20
I_D = 250 µA
0.7
15
0.6
10
0.5
5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01 0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_(DS)on*
10
100 ms
1
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
1 ms
10 ms
100 s
10 s, 1 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64802
S-09-0664-Rev. A, 20-Apr-09
www.vishay.com
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