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SI8447DB Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
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Si8447DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 85 °C/W.
c. Case is defined as top surface of the package.
Symbol
RthJA
RthJC
Typical
37
7
Maximum
45
9.5
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 1 A
VGS = - 1.7 V, ID = - 0.5 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 1 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = 1 A
VGS = - 0.1 V, f = 1 MHz
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 8 V, Rg = 1 Ω
Min.
- 20
- 0.4
-5
Typ.
- 20
2.5
0.060
0.085
0.170
7
Max.
Unit
- 1.2
± 100
-1
- 10
0.075
0.105
0.260
V
mV/°C
V
nA
µA
A
Ω
S
600
160
pF
105
15
25
7.5
12
nC
1.2
2.2
12
Ω
25
40
25
40
35
55
12
20
ns
7
15
10
15
30
45
15
25
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Document Number: 64802
S-09-0664-Rev. A, 20-Apr-09
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