SI7705DN Datasheet, PDF (6/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7705DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 115_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
www.vishay.com
6
Document Number: 71607
S-22520—Rev. B, 27-Jan-03