SI7705DN Datasheet, PDF (4/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7705DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
100
On-Resistance vs. Gate-to-Source Voltage
0.20
10
T_J = 150_C
1
0.1
T_J = 25_C
0.16
0.12
0.08
0.04
I_D = 6.3 A
0.01
0
0.4
0.3
0.2
0.1
0.0
-0.1
0.2
0.4 0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
I_D = 935 mA
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
50
40
30
20
10
-0.2
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71607
S-22520—Rev. B, 27-Jan-03