SI7705DN Datasheet, PDF (1/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

New Product
Si7705DN
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
-20
r_DS(on) (W)
0.048 @ V_GS = -4.5 V
0.068 @ V_GS = -2.5 V
0.090 @ V_GS = -1.8 V
I_D (A)
- 6.3
- 5.3
- 4.6
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
20
V_f (V)
Diode Forward Voltage
0.48 V @ 0.5 A
I_F (A)
1.0
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Ultra-Low Thermal Resistance, PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Charger Switching
PowerPAKt 1212-8
3.30 mm
K
8
K
7
D
6
D
5
A
1
A
3.30 mm
2
S
3
G
4
Bottom View
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T_J = 150_C) (MOSFET)^a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_KA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
-20
20
"8
- 6.3
-4.3
-4.5
-3.1
-20
-2.3
-1.1
1.0
7
2.8
1.3
1.5
0.7
2.0
1.1
1.0
0.6
-55 to 150
Notes
a. Surface Mounted on 1” x1” FR4 Board.
Unit
V
A
W
_C
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
www.vishay.com
1