SI7705DN Datasheet, PDF (5/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

New Product
Si7705DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
MOSFET
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
5
10
10^{- 1}
1
SCHOTTKY
Forward Voltage Drop
1
0.1
20 V
0.01
10 V
T_J = 150_C
1
T_J = 25_C
0.001
0.0001
0
25
50
75
100 125 150
T_J - Junction Temperature (_C)
150
0.1
0
Capacitance
0.2
0.4
0.6
0.8
1.0
V_F - Forward Voltage Drop (V)
120
90
60
30
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
0
0
4
8
12
16
20
V_KA - Reverse Voltage (V
www.vishay.com
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