SI7705DN Datasheet, PDF (3/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

New Product
Si7705DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 2.5 V
16
16
2V
12
12
MOSFET
Transfer Characteristics
T_C = -55_C
25_C
125_C
8
1.5 V
4
1, 0.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
2000
Capacitance
0.16
0.12
0.08
V_GS = 1.8 V
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
8
V_DS = 10 V
I_D = 6.3 A
6
1600
C_iss
1200
800
400
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.5
V_GS = 4.5 V
I_D = 6.3 A
1.3
4
1.1
2
0.9
0
0
3
6
9
12 15 18 21
Q_g - Total Gate Charge (nC)
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
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