SI7705DN Datasheet, PDF (2/6 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7705DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
New Product
t v 10 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJC
Typical
35
51
75
91
4
10
Maximum
44
64
94
115
5
12
Unit
_C/W
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = -16 V, V_GS = 0 V
V_DS = -16 V, V_GS = 0 V, T_J = 85_C
V_DS v -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -6.3 A
V_GS = -2.5 V, I_D = -5.3 A
V_GS = -1.8 V, I_D = -1 A
V_DS = -10 V, I_D = -6.3 A
I_S = -2.3 A, V_GS = 0 V
-0.45
-20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = -10 V, V_GS = -4.5 V, I_D = -6.3 A
V_DD = -10 V, R_L = 10 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ
0.040
0.054
0.070
14
-0.8
11
2.7
1.9
70
75
20
45
Max Unit
V
"100
nA
-1
mA
-5
A
0.048
0.068
W
0.090
S
-1.2
V
17
nC
105
110
ns
30
70
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 0.5 A
I_F = 0.5 A, T_J = 125_C
V_r = 20 V
V_r = 20 V, T_J = 85_C
V_r = 20 V, T_J = 125_C
V_r = 10 V
Typ
0.42
0.33
0.002
0.10
1.5
31
Max
0.48
0.4
0.100
1
10
Unit
V
mA
pF
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Document Number: 71607
S-22520—Rev. B, 27-Jan-03