|
SI6562DQ Datasheet, PDF (6/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET | |||
|
◁ |
Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.20
10
TJ = 150_C
0.16
0.12
TJ = 25_C
0.08
0.04
ID = 4.5 A
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD â Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Threshold Voltage
0.8
0.6
ID = 250 mA
0.4
Single Pulse Power
40
30
0.2
20
â0.0
â0.2
10
â0.4
â0.6
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
10 30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-6
Document Number: 70720
S-56944âRev. B, 23-Nov-98
|