SI6562DQ Datasheet, PDF (4/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
10
T_J = 150_C
T_J = 25_C
0.08
I_D = 4.5 A
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I_D = 250 mA
0.2
–0.0
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
40
32
24
–0.2
16
–0.4
8
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
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2-4
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 125_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70720
S-56944—Rev. B, 23-Nov-98