SI6562DQ Datasheet, PDF (5/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
20
3V
24
V_GS = 5, 4.5, 4, 3,5 V
16
2.5 V
18
12
P-CHANNEL
Transfer Characteristics
12
6
0
0
0.20
2V
1.5 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.16
8
4
0
0
2500
2000
T_C = 125_C
25_C
–55_C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
C_iss
0.12
0.08
V_GS = 2.5 V
V_GS = 4.5 V
1500
1000
0.04
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
4.5
V_DS = 10 V
3.6
I_D = 3.5 A
2.7
1.8
0.9
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 3.5 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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