SI6562DQ Datasheet, PDF (1/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si6562DQ
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.030 @ V_GS = 4.5 V
0.040 @ V_GS = 2.5 V
0.050 @ V_GS = –4.5 V
0.085 @ V_GS = –2.5 V
I_D (A)
"4.5
"3.9
"3.5
"2.7
TSSOP-8
D₁ 1 _D
S_{1 2}
Si6562DQ
S_{1 3}
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
D₁
G₁
S₁
N-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
–20
"12
"12
"4.5
"3.5
"3.6
"2.7
"30
"30
1.25
–1.25
1.0
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Symbol
R_thJA
N- or P-Channel
125
Unit
_C/W
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