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SI6562DQ Datasheet, PDF (3/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET | |||
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Si6562DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 5 thru 3 V
2.5 V
24
24
N-CHANNEL
Transfer Characteristics
18
18
12
6
0
0
0.08
2V
1.5 V
2
4
6
8
10
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
0
0
6
12
18
24
30
ID â Drain Current (A)
Gate Charge
4.5
VDS = 10 V
3.6
ID = 4.5 A
2.7
1.8
0.9
0
0
3
6
9
12
15
Qg â Total Gate Charge (nC)
12
6
0
0
2100
TC = 125_C
25_C
â55_C
0.5
1.0
1.5
2.0
2.5
3.0
VGS â Gate-to-Source Voltage (V)
Capacitance
1800
Ciss
1500
1200
900
600
Coss
300
0
0
Crss
4
8
12
16
20
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 4.5 V
ID = 4.5 A
1.4
1.2
1.0
0.8
0.6
0.4
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
Document Number: 70720
S-56944âRev. B, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
2-3
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