SI6562DQ Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si6562DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = 20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS = –20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_DS w –5 V, V_GS = –4.5 V
V_GS = 4.5 V, I_D = 4.5 A
V_GS = –4.5 V, I_D = –3.5 A
V_GS = 2.5 V, I_D = 3.9 A
V_GS = –2.5 V, I_D = –2.7 A
V_DS = 10 V, I_D = 4.5 A
V_DS = –10 V, I_D = –3.5 A
I_S = 1.25 A, V_GS = 0 V
I_S = –1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 15 V, V_GS = 4.5 V, I_D = 4.5 A
Q_gs
P-Channel
V_DS = –15 V, V_GS = –4.5 V, I_D = –3.5 A
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain
Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
P-Channel
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = 1.25 A, di/dt = 100 A/ms
I_F = –1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
0.6
P-Ch
–0.6
N-Ch
P-Ch
N-Ch
V
"100
nA
"100
1
P-Ch
N-Ch
–1
mA
25
P-Ch
N-Ch
30
P-Ch
–30
–25
A
N-Ch
0.023 0.030
P-Ch
N-Ch
0.040 0.050
W
0.030 0.040
P-Ch
N-Ch
P-Ch
0.060 0.085
20
S
10
N-Ch
P-Ch
0.65
1.2
V
0.72
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
13
25
14.5
25
3.0
nC
3.5
3.3
3.5
22
50
27
50
40
80
30
60
50
100
ns
57
100
20
40
21
40
30
60
60
100
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70720
S-56944—Rev. B, 23-Nov-98