SI4824DY Datasheet, PDF (6/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET

Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL 2
Source-Drain Diode Forward Voltage
60
On-Resistance vs. Gate-to-Source Voltage
0.04
T_J = 150_C
T_J = 25_C
10
0.03
0.02
I_D = 4.7 A
0.01
1
0
0.4
0.8
1.2
1.6
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.50
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
0.25
40
0.00
I_D = 250 mA
30
–0.25
20
–0.50
10
–0.75
–1
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.10
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
10^–4
10^–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 80_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
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2-6
Document Number: 70800
S-56946—Rev. C, 23-Nov-98