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SI4824DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
Si4824DY
Vishay Siliconix
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 1
30
N-Channel 2
rDS(on) (W)
0.040 @ VGS = 10 V
0.065 @ VGS = 4.5 V
0.0175 @ VGS = 10 V
0.027 @ VGS = 4.5 V
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D2
6 D2
5 D2
ID (A)
"4.7
"3.7
"9
"7.3
D1
D2 D2 D2
G1
G2
S1
N-Channel MOSFET 1
S2
N-Channel MOSFET 2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel 1 N-Channel 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"4.7
"3.7
"40
1.2
1.4
0.9
–55 to 150
30
"20
"9
"7.2
"60
2.0
2.25
1.5
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
N-Ch 1
N-Ch 2
t v10 sec
Steady State
t v10 sec
Steady State
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70800
S-56946—Rev. C, 23-Nov-98
Typical
125
80
Maximum
90
55
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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