 English |
|
|
|
|
|
|
|
| SI4824DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET | |||
| |||
| ◁ |
Si4824DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
ID(on)
rDS(on)
gfs
VSD
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 4.7 A
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 3.7 A
VGS = 4.5 V, ID = 7.3 A
VDS = 15 V, ID = 4.7 A
VDS = 15 V, ID = 9 A
IS = 1.2 A, VGS = 0 V
IS = 2.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel 1
VDS = 15 V, VGS = 5 V, ID = 4.7 A
Qgs
N-Channel 2
VDS = 15 V, VGS = 5 V, ID = 9 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design aid only; not subject to production testing.
N-Channel 1
VDD = 15 V, RL =15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
N-Channel 2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.2 A, di/dt = 100 A/ms
IF = 2.0 A, di/dt = 100 A/ms
Min
N-Ch 1
1.0
N-Ch 2
1.0
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
20
N-Ch 2
30
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
Typ Max Unit
V
"100
nA
"100
1
1
mA
5
5
A
0.033
0.040
0.014 0.0175
W
0.048
0.065
0.020
0.027
12
S
25
0.7
1.2
V
0.7
1.2
6.5
10
17.5
27
3.0
nC
7.5
2.5
6.5
10
20
15
30
12
20
15
30
20
35
ns
45
70
10
20
20
35
40
80
40
80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70800
S-56946âRev. C, 23-Nov-98
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese