SI4824DY Datasheet, PDF (5/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET

Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
60
NĆCHANNEL 2
Transfer Characteristics
50
V_GS = 10 thru 5 V
50
40
40
30
20
10
0
0
0.040
4V
2V
3V
1
2
3
4
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
30
20
T_C = 125_C
10
25_C
–55_C
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
3000
Capacitance
0.035
0.030
2300
C_iss
0.025
0.020
V_GS = 4.5 V
0.015
V_GS = 10 V
0.01
0
10
20
30
40
50
60
I_D – Drain Current (A)
10
V_DS = 15 V
I_D = 9 A
8
Gate Charge
6
4
2
0
0 4 8 12 16 20 24 28 32
Q_g – Total Gate Charge (nC)
1600
900
C_oss
C_rss
200
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.55
1.45
1.35
V_GS = 10 V
I_D = 9 A
1.25
1.15
1.05
0.95
0.85
0.75
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 70800
S-56946—Rev. C, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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