SI4824DY Datasheet, PDF (3/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET

Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 6 V
30
30
5V
20
10
0
0
0.10
4V
2V
3V
1
2
3
4
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
20
10
0
0
1200
NĆCHANNEL 1
Transfer Characteristics
T_C = –55_C
25_C
125_C
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.08
0.06
V_GS = 4.5 V
0.04
0.02
V_GS = 10 V
1000
800
600
400
200
C_iss
C_rss
C_oss
0
0
10
20
30
40
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 4.7 A
6
4
2
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.55
1.35
V_GS = 10 V
I_D = 4.7 A
1.15
0.95
0
0
3
6
9
12
Q_g – Total Gate Charge (nC)
0.75
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 70800
S-56946—Rev. C, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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