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SI4824DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET | |||
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Si4824DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NÄCHANNEL 1
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.10
TJ = 150_C
10
TJ = 25_C
0.08
0.06
0.04
ID = 4.7 A
0.02
1
0
0.4
0.8
1.2
1.6
VSD â Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
0.45
0.25
0.05
â0.15
Threshold Voltage
ID = 250 mA
Single Pulse Power
30
24
18
â0.35
â0.55
â0.75
â0.95
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
12
6
0
0.01
0.10
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 Single Pulse
0.001
10â4
10â3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70800
S-56946âRev. C, 23-Nov-98
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