SI4558DY Datasheet, PDF (6/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
10
T_J = 150_C
0.08
0.06
T_J = 25_C
0.04
I_D = 6 A
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.8
Single Pulse Power
40
0.6
32
0.4
I_D = 250 mA
0.2
24
–0.0
16
–0.2
8
–0.4
–0.6
–50
0
50
100
150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 52_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
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2-6
Document Number: 70633
S-56944—Rev. E, 23-Nov-98