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SI4558DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
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Si4558DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 70_C
VDS = –24 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 10 V
VDS = –5 V, VGS = –10 V
VDS = 5 V, VGS = 4.5 V
VDS = –5 V, VGS = –4.5 V
VGS = 10 V, ID = 6 A
VGS = –10 V, ID = –6 A
VGS = 4.5 V, ID = 4.8 A
VGS = –4.5 V, ID = –4.4 A
VDS = 15 V, ID = 6 A
VDS = –15 V, ID = –6 A
IS = 2 A, VGS = 0 V
IS = –2 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 6 A
Qgs
P-Channel
VDS = –15 V, VGS = –10 V
ID = –6 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = 2 A, di/dt = 100 A/ms
IF = –2 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
1.0
P-Ch
–1.0
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
30
P-Ch
–30
N-Ch
8.0
P-Ch
–8.0
V
"100
nA
1
–1
mA
5
–5
A
N-Ch
P-Ch
N-Ch
P-Ch
0.032 0.040
0.032 0.040
W
0.045 0.060
0.056 0.070
N-Ch
P-Ch
N-Ch
P-Ch
13
S
10.6
0.77
1.2
V
0.77
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
16
30
22
35
3.4
nC
5.4
2.3
3.6
12
25
12
25
12
25
12
25
27
55
ns
38
55
24
50
25
50
45
80
50
80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
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