SI4558DY Datasheet, PDF (3/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10, 9, 8, 7, 6, 5 V
24
24
N-CHANNEL
Transfer Characteristics
18
4V
12
6
3V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
0.150
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
0.025
V_GS = 4.5 V
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 6 A
6
18
12
T_C = 125_C
6
25_C
–55_C
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
1500
Capacitance
1200
C_iss
900
600
C_oss
300
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 10 V
I_D = 6 A
1.2
4
0.8
2
0.4
0
0
4
8
12
16
Q_g – Total Gate Charge (nC)
0
–50
0
50
100
150
T_J – Junction Temperature (_C)
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
www.vishay.com S FaxBack 408-970-5600
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