SI4558DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
–30
r_DS(on) (W)
0.040 @ V_GS = 10 V
0.060 @ V_GS = 4.5 V
0.040 @ V_GS = –10 V
0.070 @ V_GS = –4.5 V
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8D
7D
6D
5D
I_D (A)
"6
"4.8
"6
"4.4
S₂
G₂
D
G₁
S₁
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
–30
"20
"20
"6
"6
"4.7
"4.7
"30
"30
2
–2
2.4
1.5
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
Symbol
R_thJA
N- or P- Channel
52
Unit
_C/W
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