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SI4558DY Datasheet, PDF (5/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET | |||
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Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 10, 9, 8, 7, 6, 5 V
24
24
P-CHANNEL
Transfer Characteristics
TC = â55_C
25_C
18
18
125_C
4V
12
12
6
0
0
0.20
3V
2
4
6
8
10
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
0
0
1
2
3
4
5
6
VGS â Gate-to-Source Voltage (V)
2000
Capacitance
0.15
1500
Ciss
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0
0
6
12
18
24
30
ID â Drain Current (A)
Gate Charge
10
VDS = 15 V
8
ID = 6 A
6
4
2
0
0
5
10
15
20
25
Qg â Total Gate Charge (nC)
Document Number: 70633
S-56944âRev. E, 23-Nov-98
1000
Coss
500
Crss
0
0
6
12
18
24
30
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
VGS = 10 V
1.6
ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
â50
0
50
100
150
TJ â Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-5
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