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SI4558DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET | |||
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Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
TJ = 150_C
10
0.08
0.06
1
0
0.4
TJ = 25_C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.2
ID = 250 mA
â0.0
â0.2
â0.4
â0.6
0.04
ID = 6 A
0.02
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
40
32
24
16
8
â0.8
â50
0
50
100
150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
30
0.2
0.1
0.1
0.05
0.02
0.01
10â4
10â3
Single Pulse
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 52_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70633
S-56944âRev. E, 23-Nov-98
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