GA200SA60UP Datasheet, PDF (6/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

www.vishay.com
ORDERING INFORMATION TABLE
GA200SA60UP
Vishay Semiconductors
Device code
G A 200 S A 60 U P
1
2
3
4
5
6
7
8
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - Generation 4, IGBT silicon, DBC construction
3 - Current rating (200 = 200 A)
4 - Single switch, no diode
5 - SOT-227
6 - Voltage rating (60 = 600 V)
7 - Speed/type (U = Ultrafast)
8 - None = Standard production
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
n-channel
Lead assignment
E
C
4
3
1
2
E
G
Dimensions
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Revision: 26-Oct-11
6
Document Number: 94364
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000