GA200SA60UP Datasheet, PDF (5/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

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60
R_G = 2.0 Ω
50
T_J = 150 °C
V_CC = 480 V
V_GE = 15 V
40
30
20
10
0
0
100
200
300
400
I_C - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
1000
V_GE = 20 V
T_J = 125 °C
100
Safe operating area
10
1
10
100
1000
V_CE - Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
GA200SA60UP
Vishay Semiconductors
50 V
1000 V
L
V_C*
D.U.T.
1
2
* Driver same type as D.U.T.; V_C = 80 % of V_CE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I_d
Fig. 13a - Clamped Inductive Load Test Circuit
0 V to 480 V
480 µF
960 V
R_L =
480 V
4 x I_C at 25 °C
Fig. 13b - Pulsed Collector Current Test Circuit
50 V
L
Driver*
V_C
1000 V
1
2
I_C
D.U.T.
3
* Driver same type
as D.U.T., V_C = 480 V
Fig. 14a - Switching Loss Test Circuit
1
2
3
V_C
90 %
10 %
5%
I_C
10 %
90 %
t_d(off)
t_r
t_f
t_d(on)
E_on
E_off
E_ts = (E_on + E_off)
Fig. 14b - Switching Loss Waveforms
t = 5 µs
Revision: 26-Oct-11
5
Document Number: 94364
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