GA200SA60UP Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

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GA200SA60UP
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
V_(BR)CES
V_(BR)ECS
V_GE = 0 V, I_C = 250 μA
V_GE = 0 V, I_C = 1.0 A
Pulse width  80 μs; duty factor  0.1
Temperature coeff. of breakdown
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
V_(BR)CES/T_J
V_CE(on)
V_GE(th)
V_GE(th)/T_J
g_fe
V_GE = 0 V, I_C = 10 mA
I_C = 100 A
I_C = 200 A
I_C = 100 A, T_J = 150 °C
V_GE = 15 V
See fig. 2, 5
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 2.0 mA
V_CE = 100 V, I_C = 100 A
Pulse width 5.0 μs, single shot
Zero gate voltage collector current
Gate to emitter leakage current
V_GE = 0 V, V_CE = 600 V
I_CES
V_GE = 0 V, V_CE = 600 V, T_J = 150 °C
I_GES
V_GE = ± 20 V
MIN.
600
18
-
-
-
-
3.0
-
79
-
-
-
TYP.
-
-
0.38
1.60
1.92
1.54
-
- 11
-
-
-
-
MAX.
-
-
UNITS
V
-
V/°C
1.9
-
V
-
6.0
-
mV/°C
-
S
1.0
mA
10
± 250
nA
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate-emitter charge (turn-on)
Gate-collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
I_C = 100 A
V_CC = 400 V
V_GE = 15 V; See fig. 8
T_J = 25 °C
I_C = 100 A
V_CC = 480 V
V_GE = 15 V
R_g = 2.0 
Energy losses include “tail”
See fig. 9, 10, 14
T_J = 150 °C
I_C = 100 A, V_CC = 480 V
V_GE = 15 V, R_g = 2.0 
Energy losses include “tail”
See fig. 10, 11, 14
Measured 5 mm from package
V_GE = 0 V
V_CC = 30 V
f = 1.0 MHz; See fig. 7
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
770
100
260
54
79
130
300
0.98
3.48
4.46
56
75
160
460
7.24
5.0
16 500
1000
200
MAX.
1200
150
380
-
-
200
450
-
-
7.6
-
-
-
-
-
-
-
-
-
UNITS
nC
ns
mJ
ns
mJ
nH
pF
Revision: 26-Oct-11
2
Document Number: 94364
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