GA200SA60UP Datasheet, PDF (4/8 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

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1
GA200SA60UP
Vishay Semiconductors
0.1
0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t₁ - Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case
30 000
25 000
20 000
15 000
10 000
V_GE = 0 V, f = 1 MHz
C_ies = C_ge + C_gc, C_ce shorted
C_res = C_gc
C_oes = C_ce + C_gc
C_ies
C_oes
5000
C_res
0
1
10
100
V_CE - Collector to Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
20
V_CC = 400 V
I_C = 110 A
16
12
8
4
0
0
200
400
600
800
Q_G - Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
60
V_CC = 480 V
50
V_GE = 15 V
T_J = 25 °C
I_C = 200 A
40
30
20
10
0
0
10
20
30
40
50
60
R_G - Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
I_C = 350 A
I_C = 200 A
10
1
- 60 - 40 - 20 0
I_C = 100 A
R_G = 2.0 Ω
V_GE = 15 V
V_CC = 480 V
20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Revision: 26-Oct-11
4
Document Number: 94364
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